| 发明名称 | Electronic device | ||
| 摘要 | There is provided an electronic device. The electronic device includes: a wiring board; a first electronic component mounted on the wiring board and configured to emit an electromagnetic wave having a first frequency band; a second electronic component mounted on the wiring board and configured to emit an electromagnetic wave having a second frequency band; a first magnetic thin film covering the wiring board, the first electronic component and the second electronic component, wherein the first magnetic thin film has a composition corresponding to the first frequency band; and a second magnetic thin film covering the first magnetic thin film, wherein the second magnetic thin film has a composition corresponding to the second frequency band. | ||
| 申请公布号 | US9510490(B2) | 申请公布日期 | 2016.11.29 |
| 申请号 | US201414190640 | 申请日期 | 2014.02.26 |
| 申请人 | SHINKO ELECTRIC INDUSTRIES CO., LTD. | 发明人 | Kobayashi Tomoki |
| 分类号 | H05K9/00;H05K1/02 | 主分类号 | H05K9/00 |
| 代理机构 | Drinker Biddle & Reath LLP | 代理人 | Drinker Biddle & Reath LLP |
| 主权项 | 1. An electronic device comprising: a wiring board; a first electronic component which is mounted on the wiring board and emits an electromagnetic wave having a first frequency band; a second electronic component which is mounted on the wiring board and emits an electromagnetic wave having a second frequency band; a first magnetic thin film covering the wiring board, the first electronic component and the second electronic component, wherein the first magnetic thin film has a composition corresponding to the first frequency band and is a Mn—Zn ferrite film; and a second magnetic thin film covering the first magnetic thin film, wherein the second magnetic thin film has a composition corresponding to the second frequency band and is a Ni—Zn ferrite film, wherein a resonance frequency of the Mn—Zn ferrite film is smaller than that of the Ni—Zn ferrite film, wherein a resistivity of the first magnetic thin film is larger than that of the second magnetic thin film, wherein the first frequency band is different from the second frequency band, wherein the first magnetic thin film shields or attenuates the electromagnetic wave having the first frequency band, and the second magnetic thin film shields or attenuates the electromagnetic wave having the second frequency band. | ||
| 地址 | Nagano-shi, Nagano JP | ||