VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY SWITCHING DEVICE USING AN EXTERNAL FERROMAGNETIC BIASING FILM

摘要

Aspects of the present disclose related to a voltage-controlled magnetic anisotropy (VCMA) switching device using an external ferromagnetic biasing film. Aspects of the present disclose provide for a magnetoresistive random access memory (MRAM) device. The MRAM device generally includes a substrate, at least one magnetic tunnel junction (MTJ) stack disposed on the substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having unfixed magnetization, and a magnet disposed adjacent to the second ferromagnetic layer.

主权项

1. A magnetoresistive random access memory (MRAM) device, comprising:
a substrate; a passivation layer disposed on the substrate; at least one magnetic tunnel junction (MTJ) stack disposed on the substrate, wherein the MTJ stack comprises a tunnel barrier layer between a first ferromagnetic layer having a fixed magnetization and a second ferromagnetic layer having unfixed magnetization; and a magnet disposed in the passivation layer and adjacent to the second ferromagnetic layer, wherein the magnet is an external magnet to the stack and is horizontally parallel to the substrate and aligned with the second ferromagnetic layer.