发明名称 CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 PURPOSE: A chemical vapor deposition apparatus capable of depositing a thin film on a wafer loaded on a boat in a uniform thickness by making uniform a flow of a reactive gas in an inner pipe is provided. CONSTITUTION: The chemical vapor deposition apparatus comprising: a boat(150), a plurality of wafers are loaded in an inside of the boat(150); a double reaction pipe(110) including a inner pipe(112) for enclosing the boat(150) and an outer pipe(114) arranged at an outer side of the inner pipe(112); a heating source(120) arranged at an outer side of the outer pipe(114) of the double reaction pipe(110) for heating the double reaction pipe(110); a gas supply pipe(130) for supplying reactive gas into the inner pipe(112) of the double reaction pipe(110); and a gas discharge pipe(140) installed between the inner pipe(112) and outer pipe(114) for discharging the reactive gas to an outside of the double reaction pipe(110).
申请公布号 KR20000009190(A) 申请公布日期 2000.02.15
申请号 KR19980029444 申请日期 1998.07.22
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 KO, JO HWAN
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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