发明名称 |
CHEMICAL VAPOR DEPOSITION APPARATUS |
摘要 |
PURPOSE: A chemical vapor deposition apparatus capable of depositing a thin film on a wafer loaded on a boat in a uniform thickness by making uniform a flow of a reactive gas in an inner pipe is provided. CONSTITUTION: The chemical vapor deposition apparatus comprising: a boat(150), a plurality of wafers are loaded in an inside of the boat(150); a double reaction pipe(110) including a inner pipe(112) for enclosing the boat(150) and an outer pipe(114) arranged at an outer side of the inner pipe(112); a heating source(120) arranged at an outer side of the outer pipe(114) of the double reaction pipe(110) for heating the double reaction pipe(110); a gas supply pipe(130) for supplying reactive gas into the inner pipe(112) of the double reaction pipe(110); and a gas discharge pipe(140) installed between the inner pipe(112) and outer pipe(114) for discharging the reactive gas to an outside of the double reaction pipe(110).
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申请公布号 |
KR20000009190(A) |
申请公布日期 |
2000.02.15 |
申请号 |
KR19980029444 |
申请日期 |
1998.07.22 |
申请人 |
SAMSUNG ELECTRONICS CO, LTD. |
发明人 |
KO, JO HWAN |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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