| 摘要 |
A semiconductor device is provided in which a pixel portion and a driver circuit each including a thin film transistor are provided over one substrate; the thin film transistor in the pixel portion includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer having an end region with a small thickness, an oxide insulating layer in contact with part of the oxide semiconductor layer, source and drain electrode layers, and a pixel electrode layer; the thin film transistor in the pixel portion has a light-transmitting property; and source and drain electrode layers of the thin film transistor in the driver circuit portion are formed using a conductive material having lower resistance than a material of the source and drain electrode layer in the pixel portion. |
