SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a method of manufacturing the same are disclosed, which may improve the operating performance of a multi-gate transistor in a highly scaled integrated circuit device. The semiconductor device includes a first active fin unit protruding on a first region of a semiconductor substrate and extending along a first direction. The first active fin unit includes at least one first active fin having left and right profiles, which are symmetric to each other about a first center line perpendicular to a top surface of the semiconductor substrate on a cut surface perpendicular to the first direction. A second active fin unit protrudes on a second region of the semiconductor substrate and includes two second active fins, each having a left and right profiles, which are asymmetric to each other about a second center line perpendicular to the top surface of the semiconductor substrate on a cut surface.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a first active fin unit protruding on a first region of the semiconductor substrate and extending along a first direction, the first active fin unit comprising at least one first active fin, each first active fin having a left profile and a right profile that are symmetric to each other about a first center line substantially perpendicular to a top surface of the semiconductor substrate on a cut surface perpendicular to the first direction; and a second active fin unit protruding on a second region of the semiconductor substrate and extending in the first direction, the second active fin unit comprising two second active fins, each second active fin having a left profile and a right profile that are asymmetric to each other about a second center line perpendicular to the top surface of the semiconductor substrate on the cut surface, wherein each of the first and second active fins comprises a lower active fin surrounded by a device isolation layer and an upper active fin protruding from the device isolation layer, and wherein each of the first center line and the second center line is defined as a straight line disposed approximately equidistant between left and right points of the lower active fin, which are at a substantially same height above the top surface of the semiconductor substrate.