发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a cell semiconductor pattern disposed on a semiconductor substrate. A semiconductor dummy pattern is disposed on the semiconductor substrate. The semiconductor dummy pattern is co-planar with the cell semiconductor pattern. A first circuit is disposed between the semiconductor substrate and the cell semiconductor pattern. A first interconnection structure is disposed between the semiconductor substrate and the cell semiconductor pattern. A first dummy structure is disposed between the semiconductor substrate and the cell semiconductor pattern. Part of the first dummy structure is co-planar with part of the first interconnection structure. A second dummy structure not overlapping the cell semiconductor pattern is disposed on the semiconductor substrate. Part of the second dummy structure is co-planar with part of the first interconnection structure. A conductive shielding pattern is disposed between the cell semiconductor pattern and the semiconductor substrate and above the first circuit and the first interconnection structure. |
申请公布号 |
US2016163635(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201514957113 |
申请日期 |
2015.12.02 |
申请人 |
Yun Jang-Gn;Yun Jaesun;Lim Joon-Sung |
发明人 |
Yun Jang-Gn;Yun Jaesun;Lim Joon-Sung |
分类号 |
H01L23/528;H01L23/00;H01L23/552;H01L27/115 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hwaseong-Si KR |