发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a cell semiconductor pattern disposed on a semiconductor substrate. A semiconductor dummy pattern is disposed on the semiconductor substrate. The semiconductor dummy pattern is co-planar with the cell semiconductor pattern. A first circuit is disposed between the semiconductor substrate and the cell semiconductor pattern. A first interconnection structure is disposed between the semiconductor substrate and the cell semiconductor pattern. A first dummy structure is disposed between the semiconductor substrate and the cell semiconductor pattern. Part of the first dummy structure is co-planar with part of the first interconnection structure. A second dummy structure not overlapping the cell semiconductor pattern is disposed on the semiconductor substrate. Part of the second dummy structure is co-planar with part of the first interconnection structure. A conductive shielding pattern is disposed between the cell semiconductor pattern and the semiconductor substrate and above the first circuit and the first interconnection structure.
申请公布号 US2016163635(A1) 申请公布日期 2016.06.09
申请号 US201514957113 申请日期 2015.12.02
申请人 Yun Jang-Gn;Yun Jaesun;Lim Joon-Sung 发明人 Yun Jang-Gn;Yun Jaesun;Lim Joon-Sung
分类号 H01L23/528;H01L23/00;H01L23/552;H01L27/115 主分类号 H01L23/528
代理机构 代理人
主权项
地址 Hwaseong-Si KR