| 摘要 |
<p>1342399 SiO 2 layer RCA CORPORATION 25 May 1971 [30 June 1970] 16876/71 Heading C1A An SiO 2 layer is provided on a surface of an Si body by cleaning the surface, oxidizing the surface to produce a first layer of SiO 2 , removing the first layer without exposing the surface to an oxidizing atmosphere, preheating the body at 100-200‹ C. in an oxidizing atmosphere, and reoxidizong the surface at a temperature of at least 500‹ C. to produce a second layer of SiO 2 . The surface may be cleaned by boiling in H 2 O 2 + NH 4 OH, then washing, etching with cone. HF, and washing again. Oxidation may be effected by passing H 2 O over the body heated to 1100‹ C. in the first step and 600‹ C. in the second. The SiO 2 may be removed by the same cleaning methods, and the body may then be preheated in air containing a controlled amount of H 2 O vapour. It may finally be annealed at 500‹ C. in purified H 2 .</p> |
