发明名称 Low power CMOS crystal oscillator
摘要 A two transistor CMOS inverter has the two transistor gates coupled together by a coupling capacitor. D-C gate bias is supplied to each transistor through high value resistors. The P-channel transistor is biased one threshold below VDD and the N-channel transistor is biased one threshold above ground. The biasing voltages are developed through the use of a current mirror so that the biasing is independent of processing variables and temperature. This form of biasing renders the circuit class B regardless of the source to drain voltage and ensures low current operation. A crystal oscillator created using such an inverter and biasing will operate at voltages substantially below sum of P and N thresholds and at a current level about one-fifth of that of a conventional CMOS oscillator.
申请公布号 US4387349(A) 申请公布日期 1983.06.07
申请号 US19800216332 申请日期 1980.12.15
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 RAPP, A. KARL
分类号 H03B5/04;H03B5/36;H03K3/354;(IPC1-7):H03B5/36 主分类号 H03B5/04
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