发明名称 |
Low power CMOS crystal oscillator |
摘要 |
A two transistor CMOS inverter has the two transistor gates coupled together by a coupling capacitor. D-C gate bias is supplied to each transistor through high value resistors. The P-channel transistor is biased one threshold below VDD and the N-channel transistor is biased one threshold above ground. The biasing voltages are developed through the use of a current mirror so that the biasing is independent of processing variables and temperature. This form of biasing renders the circuit class B regardless of the source to drain voltage and ensures low current operation. A crystal oscillator created using such an inverter and biasing will operate at voltages substantially below sum of P and N thresholds and at a current level about one-fifth of that of a conventional CMOS oscillator.
|
申请公布号 |
US4387349(A) |
申请公布日期 |
1983.06.07 |
申请号 |
US19800216332 |
申请日期 |
1980.12.15 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
RAPP, A. KARL |
分类号 |
H03B5/04;H03B5/36;H03K3/354;(IPC1-7):H03B5/36 |
主分类号 |
H03B5/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|