| 摘要 |
PURPOSE:To highly integrate a semiconductor device and to increase the density and the speed of the operation of the device by introducing impurity in a conductive substance film into a semiconductor substrate to form source and drain regions and simultaneously forming an oxidized film on the surface of the conductive substance film, and then forming a gate electrode. CONSTITUTION:With a resist 5 as a mask a polycrystalline silicon film 4 is allowed to remain by etching only on the regions to be formed with source and drain. Subsequently, a heat treatment of 1,000 deg.C is performed, thereby introducing impurity of boron to an Si substrate 1, thereby forming a source region 6 and a drain region 7. At this time the surface of the film 4 is simultaneously oxidized to form an oxidized film 8 thicker than the film e of the gate region, and the entire surface of the substrate is covered with the oxidized film. Then, a polycrystalline silicon film 9 doped with phosphorus is covered. Then, with a resist 10 as a mask the film 9 is etched to form a gate electrode. Thereafter, the resist 10 is removed, a CVD oxidized film 11 is then covered in approx. 0.8mum as an interlayer insulating film, contacting holes are opened at the source, drain and gate regions, and leading electrode wirings 12-14 are formed. |
