| 摘要 |
PURPOSE:To obtain ultrafine IC by providing an insulating film between the resistance region and metal electrodes of a semiconductor substrate. CONSTITUTION:When a metal layer 6 is superposed via an Si3N4 film 6 formed by a sputter depositing method on an N type diffused layer formed on a P type Si substrate 1 or a resistance region 2 made of polysilicon, a high resistance can be readily obtained with narrow area. The quality of thick film (e.g., refractive index) is controlled, thereby readily controlling the resistance value. When Si3N4 films 6 are formed at both sides of the narrow region 2, further high resistance can be attained. The Si3N4 film formed by sputter depositing method does not produce insulation breakdown to several MV/cm, and the current density and the electric field V<1/2> exhibit direct relation thereof. |
