| 摘要 |
PURPOSE:To remarkably reduce the amt. of the deposit on an electrode due to the decomposition of the raw gas by providing many openings to the electrode in the plasma CVD device, and blowing an inert gas from the openings. CONSTITUTION:The peripheral wall part of a cylindrical vacuum vessel 1 is electrically insulated by annular insulating materials 3a and 3b to form a cylindrical electrode 4, a cylindrical intermediate part 5 is formed on the inside, and many small holes 7 are formed on the inner wall surface. A cylindrical substrate 8 consisting of a semiconductor of Si and a metal such as Al is arranged in the vacuum vessel 1 and heated by the inner heater 11 to a specified temp. The inside of the vessel is evacuated with a vent 2 while rotating the substrate by a rotating device 10, a raw gaseous reactant such as silane is introduced from a gas supply port 15, the gaseous silane is decomposed by the plasma discharge by a high-frequency power source 16, and Si is deposited on the substrate 8. In this case, an inert gas such as He, Ar, and Ne is blown from the small hole 7 of the electrode 4, and frequent cleanings of the inner surface of the electrode 4 to remove the deposited Si are not necessitated.
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