| 摘要 |
PURPOSE:To accurately regulate the parameter of beam exposure equipment by comparing the beam deflection ending position by the equipment with a measuring pattern layed out by stepwisely displacing in advance the position to quantize a lithography parameter. CONSTITUTION:Lithography patterns 5, 5,.. by the actual beam of a BWM (Y direction of a substrate) frame 11' are compared in parallel with measuring patterns 14, 14,.. layed out by stepwisely displacing in advance the position to search a point A where both coincide, thereby measuring the displacement amount of the pattern 14 at the point A from an initial reference pattern 12, i.e., 0.1mum as the theta displacement amount in the drawings. The parameter input to a deflecting electrode 2 is corrected according to the measured value to correct the theta with the theta displacement as '0', thereby regulating the theta displacement.
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