| 摘要 |
PURPOSE:To prevent the occurrence of breakdown of an insulating film between a first interconnection layer and a second interconnection layer, by connecting the second electrode interconnection layer to an impurity diffused region on the surface of each isolating island, which is formed so as to hold the insulating film on the surface of the isolating island. CONSTITUTION:A dielectric isolating island 11' is divided into a plurality of islands by isolating and insulating films 14. A high impurity concentration region 13, which has the same conductivity type as that of the isolating island 11' is formed on the bottom surface and the side surface of the dielectric isolating island 11'. The region 13 electrically connects a first electrode interconnection layer 18 and a second electrode interconnection layer 19 through electrode lead-out ports 17, which are formed in a surface insulating film 16 on the upper surface of a semiconductor element 10. The element 10 includes a plurality of dielectric isolating islands 11'. A second electrode interconnection layer 20 is arranged on the upper surface of the surface insulating film 16. Regions 22, which have the same conductivity type as that of the isolating island, and regions 21, which have the different conductivity type, are formed on the surface of the isolating island beneath the second electrode interconnection layer 20. The N-type region 22 and the second electrode interconnection layer 20 are connected by way of opening parts 23 in the surface insulating film 16. Even of a surge voltage is applied between the first and second interconnection layers, the breakdown of the insulating film can be prevented.
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