| 摘要 |
PURPOSE:To omit a diffusing step by setting the composition of a surface p-type InGaAsP layer to 0.9eV or lower of a band width to set the contact resistance of electrodes to 1/2 or less of the conventional one. CONSTITUTION:An actively layer 9 and a p-type InP clad layer 10 are seqnentially grown by a liquid phase growth on an N-type InP substrate 2. After a multilayer wafer is mesa etched to form a mesa stripe, a P-type InP layer 3, an N-type InP current blocking layer 4, a P-type InP layer 5 and a p-type InGaASP layer 6 are sequentially grown by liquid growth. Here, the composition of the layer 6 is set to a band width-0.8eV. Thus, even if a P-side electrode is formed on the narrow stripe region of 10mum wide without diffusing Zn or Cd in the layer 6, an element resistor having 6 ohms or lower can be obtained.
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