| 摘要 |
PURPOSE:To improve the adhesion between a substrate and a carbon-structure thin film by adding a gas contg. a substrate element during the initial stage of the synthesis reaction at the time of synthesizing the carbon-structure thin film on the substrate surface by producing the plasma of a gas contg. carbon. CONSTITUTION:The inside of a quartz tube 4 in the plasma CVD device using a microwave as the heat source is sufficiently evacuated by a vacuum pump 8, and then a gaseous mixture 3 of CH4 and H2 is supplied at about 10-100Torr. When a Si sheet is used as the substrate 5 on which a carbon- structure thin film is to be synsethized, about several tens ppm gaseous silane contg. Si is added and mixed into the gaseous mixture 3 of CH4 and H2 during the initial stage of the synthesis reaction, a microwave at 2.45GHz is passed through a waveguide 2 from an oscillator 1 and supplied by utilizing a reflecting plate 7, and then plasma capable of efficiently confining the substrate 5 is produced. The supply of the gaseous silane is gradually decreased as the synthesis reaction proceeds, and a high-purity carbon-structure film enriched in Si at a site close to the surface of the substrate 5, having excellent adhesion, and contg. practically no Si at a site away from the substrate 5 is synthesized on the surface of the substrate 5.
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