| 摘要 |
PURPOSE:To make it possible to deposite the film having excellent uniformity on large type substrates in a mass productive manner by a method wherein, in the method in which raw gas is fed from the lower part and exhaust gas is discharged from the upper part, the substrates are arranged vertically erecting in parallel with the stream of gas. CONSTITUTION:Substrates 4 are fixed to a quartz jig 5, and the substrates 4 are constructed in such a manner that they are rotated together with the jig 5. Also, a heat-shielding plate 6 is provided under the substrates 4, the glass substrates are placed on the quartz holder 5 leaving the specified intervals, the entire holder is moved to a temperature-equalized region from under a vertical type furnace (room temperature region), and the air in the furnace is discharged by feeding N2 intermittently while the inside of the furnace is being formed into a depressed state. Then, inside the furnace is depressed, this state is maintained for the prescribed period (preheat), and monosilane (SiH4) gas of 20% of He base is allowed to flow. The pressure in the furnace is maintained constant by flowing the He between a reaction furnace and a pump, and also by controlling back pressure. As a result, a film of good quality having excellent uniformity can be deposited on a large type substrate in a mass productive manner.
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