| 摘要 |
Disclosed is a semiconductor device having a metal-silicon alloy wiring layer and a structure wherein a metal compound, having a larger free energy decrease caused by compound formation, than a free energy decrease caused by the metal-silicon alloy formation, is precipitated. A method of fabricating the semiconductor device having the above microstructure is also disclosed. In the semiconductor device, the grain boundaries are micronized by precipitation of a metal compound, thus the mechanical strength can be improved, and the circuit reliability can also be improved. Further, an increase in resistance can be suppressed by precipitation of the metal compound.
|
