MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To precisely determine the position of a spacer by the self-positioning method by providing a second layer, having vertical portions adjacent the edge of a first layer part and etching off a mask layer, until its surface reaches the position level of the vertical portions of the second layer. CONSTITUTION: A second layer 7 and a mask layer 15 are provided in this sequence. The mask layer 15 is made thicker at regions adjacent to a portion of a first layer 2 than on this portion. The mask is etched over approximately its entire surface, to expose portions of the first layer 2 and second layer 15 located on a spacer 7A to be formed, while leaving a portion of the mask layer 15 adjacent a portion of the first layer 2. A first portion of the second layer 7 is treated to increase the etching resistance but a second portion thereof. The second layer 7 is selectively etched to form a spacer 13a. Thus, after forming the portion of the first layer, the spacer 13A can be completely formed from the second layer 7 by a self-positioning method.