| 摘要 |
PURPOSE:To use a semiconductor laser as a pumping light source for an Er- doped silica optical-fiber optical amplifier by employing AlGaInP as the material of a clad layer and GaInAs as the material of an active layer. CONSTITUTION:In a semiconductor laser formed onto a GaAs substrate 1, AlGaInP is used as the material of clad layers 3, 11, 13 and GaInAs as the material of an active layer 7. AlGalnP is lattice-matched substantially with GaAs, and the composition ratio Al/(Al+Ga) of Al to Al and Ga is set at 0.5 or more. Consequently, large band gaps can be obtained among the active layer 7 and the clad layers 3, 11, 13, thus increasing the difference of energy levels on the electron side, then preventing the overflow of electrons from the active layer 7. As a result, holes and electrons in the active layer 7 are recombined effectively. Accordingly, a sufficiently high output is acquired as a pumping light source for an Er-doped silica optical-fiber optical amplifier. |
