| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve junction characteristics by enhancing interface characteristics between a crystalline silicon semiconductor and an amorphous silicon semiconductor. <P>SOLUTION: In a method of manufacturing a photovoltaic device wherein a p-type amorphous silicon thin film 13 is laminated on an n-type amorphous silicon substrate 11 interposing an i-type amorphous silicon thin film 12, and an n-type amorphous silicon thin film 15 is laminated on the rear surface of the single crystal silicon substrate 11 interposing an i-type amorphous silicon thin film 14; after the front and rear surfaces of the single crystal silicon substrate 11 are subjected to a plasma treatment by plasma-discharging a mixing gas comprising a hydrogen gas and a carbon dioxide gas to the front and rear surface of the single crystal silicon substrate 11, the i-type amorphous silicon thin films 12, 14 are separately formed, and oxygen atoms are placed between the single crystal silicon substrate 11 and the i-type amorphous silicon thin film 12 and 14. <P>COPYRIGHT: (C)2003,JPO</p> |
