| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the light emitting efficiency of a semiconductor light emitting element, by suppressing non-light emitting recoupling in its end-surface regions through reducing the diffusion of carriers to its end-surface regions. <P>SOLUTION: By subjecting the end-surface regions of the semiconductor light emitting element to mixed crystallization, the energy level of the bottom of the band structure of each end-surface region becomes higher than the band structure of the inside of the element subjected to no mixed crystallization to reduce the diffusion of carriers to each end surface of the element. Also, by making the end surfaces of the elements inclined surfaces when separating the elements from each other, and by projecting a laser beam on all the end surfaces in a lump, all the end surfaces are subjected simply to mixed crystallization to form in a lump a plurality of semiconductor light emitting elements having improved light emitting efficiency. <P>COPYRIGHT: (C)2004,JPO |
