| 摘要 |
A floating gate transistor structure including a semiconductor substrate, an access gate dielectrically separated from the substrate, and a floating gate having (a) a first portion dielectrically separated from the substrate by a floating gate oxide region and a tunnel oxide region and (b) a second portion at last partially overlying and dielectrically separated from the access gate. A metal control gate overlies and is dielectrically separated from the floating gate. Also disclosed is a precision capacitor having a doped region as a first capacitor plate and a metal gate as a second capacitor plate. The floating gate transistor structure can be made with a process which includes the steps of forming a gate oxide layer on semiconductor substrate, forming an access gate on the gate oxide layer, and forming an interpoly oxide layer over the access gate and a floating gate oxide layer on the substrate laterally adjacent the gate oxide. A tunnel oxide region is formed in the floating gate oxide layer, and a floating gate is then formed on the interpoly oxide, the floating gate oxide, and the tunnel oxide. An oxide layer is formed over the floating gate, and a metal control gate is formed thereon. The precision capacitor is advantageously made pursuant to certain of the foregoing steps.
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