发明名称 |
Diamond electric device on silicon |
摘要 |
A diamond electric device is described. The device comprises a diamond film deposited on a semiconductor substrate and an upper electrode. The electrical contact between the diamond film and the electrode is formed only through an intervening silicon semiconductor film which prevents direct contact between the diamond film and the electrode. By this structure, the stability of electric performance is substantially improved.
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申请公布号 |
US5034784(A) |
申请公布日期 |
1991.07.23 |
申请号 |
US19900535156 |
申请日期 |
1990.06.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
分类号 |
C30B29/04;H01L21/205;H01L29/16;H01L29/165;H01L33/08;H01L33/10;H01L33/14;H01L33/34;H01L33/38;H01L33/40;H01L33/44;H01L33/56;H01L33/62 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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