METHOD FOR FABRICATING TFT SUBSTRATE STRUCTURE, AND TFT SUBSTRATE STRUCTURE

摘要

Provided are a method for fabricating a TFT substrate structure, and a TFT substrate structure. In the method for fabricating the TFT substrate structure, etching parameters are adjusted during the fabrication of a gate (5), causing the two sides of the gate (5) to form an inclined surface, and the gate (5) is taken to be a photomask and ion implantation is performed on a polycrystalline silicon layer (3); an n-type heavily doped region (31) and an n-type lightly doped region (32) are formed on the polycrystalline silicon layer (3) at the same time, adding resistance and dispersing strong electric fields near the electrode; thus the impact that the hot-carrier effect would have on component properties as a result of the presence of a local strong electric field is prevented, eliminating the need for a process to individually form n-type lightly doped regions, improving generation efficiency, and reducing production costs. In the TFT substrate structure, the polycrystalline silicon layer (3) comprises n-type heavily doped regions (31) located on its two sides and an n-type lightly doped region (32) located between the channel region (34) of the polycrystalline silicon layer and the heavily doped regions (31), preventing the occurrence of local strong electric fields and eliminating the hot-carrier impact on component properties.