VERTICAL CAVITY SURFACE EMMITING LASER

摘要

A VCSEL according to the invention, configured to emit a light having about 850 nm wavelength, comprises an active region which comprises one or more InxGa1-xAs quantum wells; two or more GaAs1-yPy barriers bonding to the one or more quantum wells; and x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29. The VCSEL has increased optical confinement and high transmission speed, good reliability characteristics, high-temperature performance, and long life time.

主权项

1. A vertical cavity surface emitting laser (VCSEL), configured to emit a light having about 850 nm wavelength, comprising:
an active region which comprises:
one or more InxGa1-xAs quantum wells; andtwo or more GaAs1-yPy barriers bonding to the one or more quantum wells; first and second phase matching layers; and two reflecting mirror stacks sandwiching the active region; wherein x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29; and wherein at least one of the reflecting mirror stacks includes an annular or polygonal oxide layer providing a current confinement structure sandwiched between the first and second phase matching layers.