发明名称 CHEMICAL VAPOR DEPOSITION EQUIPMENT FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A chemical vapor deposition equipment for fabricating a semiconductor device is provided to improve uniformity of a layer formed on a wafer and enhance production yield by conformally distributing processing gas using a gas lead wing. CONSTITUTION: A chemical vapor deposition equipment for fabricating a semiconductor device comprises an inside tube, an outside tude, a gas injector, a gas lead wing, a gas exhauster, and a heater. A wafer boat including many wafers therein is installed in the inside tube of which an upper side is an opened tube. The outside tube is made of sealed tube to isolate the inside tube from outside device. The gas lead wing makes the processing gas flow toward the wafer. The gas exhauster exhausts the processing gas completing a process. The heater heats the outside tube to heat the inside tube and the wafer.
申请公布号 KR20000020461(A) 申请公布日期 2000.04.15
申请号 KR19980039073 申请日期 1998.09.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JOO, YONG GAP;CHOI, JIN OH;KIM, JIN JU;CHO, JONG HYEONG
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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