| 摘要 |
<p>A method for forming an interface insulator layer (24) in a ferroelectric FET (10) memory, in which a liquid precursor is applied to a semiconductor substrate (14). Preferably, the liquid precursor is an enhanced metalorganic decomposition ('EMOD') precursor, applied using a liquid-source misted deposition technique. Preferably, the EMOD precursor solution applied to the substrate (14) contains metal ethylhexanoates containing metal moieties in relative molar proportions for forming an interface insulator layer (24) containing ZrO2, CeO2, y2O3 or (Ce1-x Zrx)O2, 0≤x≤1.</p> |
