| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which operation speed is increased and power consumption is reduced, and a refresh-current is reduced in a data holding state. SOLUTION: In the semiconductor storage device comprising a first storage section consisting of a DRAM and a storage section consisting of a SRAM and having plural memory blocks, in which stored information in one word line unit selected in the first storage section is transferred en bloc between one memory block of the second storage section and the first storage section, when a non-volatile storage circuit storing an address of a word line in which a memory cell of which an information holding time is extremely short exists in the first storage section and the semiconductor memory are put into a data holding mode, stored data of the first storage section is transferred to the second storage section by the stored address and it made a long first refreshing period in which the extremely short memory cell is neglected, when normal access mode is performed, stored data of the second storage section is transferred to the first storage section based on the address, and it is made a short refreshing period set corresponding to the extremely short information holding time.</p> |
