发明名称 Symmetrical differential sensing method and system for STT MRAM
摘要 The invention relates to methods and systems for reading a memory cell and in particular, an STT MRAM. In one example, a system for reading a memory cell includes a sense path and an inverse path. A reference current is provided through the sense path and is sampled via a first sampling element in the sense path, and a cell current from the memory cell is provided through the inverse sense path and is sampled via a second sampling element in the inverse sense path. Subsequently, the memory cell is disconnected from the inverse sense path, the cell current is provided through the sense path, the reference source is disconnected from the sense path, and the reference current is provided through the inverse sense path. The output levels are then determined by the cell and reference currents working against the sampled reference and sampled cell currents.
申请公布号 US9524766(B2) 申请公布日期 2016.12.20
申请号 US201514714796 申请日期 2015.05.18
申请人 Infineon Technologies AG 发明人 Mueller David;Allers Wolf;Jefremow Mihail
分类号 G11C11/00;G11C11/16;G11C7/02;G11C7/12;G11C29/02;G11C29/50 主分类号 G11C11/00
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. A method for reading a memory cell, comprising: providing a first sampling element for sampling a reference current in a sense path; providing a second sampling element for sampling a cell current from the memory cell; measuring the cell current from the memory cell using the first sampling element; and measuring the reference current using the second sampling element.
地址 Neubiberg DE