| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film capacitor for drastically reducing volume and costs, and improving electric performance. SOLUTION: On a surface 11 of a carrier moving in a vacuum state, the settlement of a dielectric gas, a mask, and the settlement of an electrode gas are made, and also the treatment is repeatedly made, thus forming a thin-film capacitor mother board where dielectric and electrode layers 9 and 8 are alternately laminated. Then, the mother plate is cut and divided for forming a chip. A metal-leading surface 11 is formed on both end faces of the chip, thus forming the thin-film capacitor where volume is greatly decreased, cost is reduced, and electric characteristics are improved.
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