| 摘要 |
Disclosed is a method of post treatment for a metal line of semiconductor device, wherein an aluminum oxide layer is employed as a protecting layer of metal line, thereby improving reliability thereof. The disclosed comprises the steps of: forming aluminum having a predetermined thickness on the entire surface of substrate having the metal line by performing a deposition process; performing a plasma treatment on a predetermined processing condition, thereby changing the aluminum into a lower barrier layer of aluminum oxide layer; and forming an inter metal dielectric layer on the entire surface of the lower barrier layer by performing a deposition process.
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