| 摘要 |
The present invention provides a system for efficiently producing versatile, high-precision MOS device structures in which straight regions dominate the device's behavior, providing minimum geometry devices that precisely match large devices, in an easy, efficient and cost-effective manner. The present invention provides methods and apparatus for producing double diffused semiconductor devices that minimize performance impacts of end cap regions. The present invention provides a MOS structure having a moat region (404, 516, 616), and an oxide region (414, 512, 608) overlapping the moat region. A double-diffusion region (402, 504, 618) is formed within the oxide region, having end cap regions (406, 502, 620) that are effectively deactivated utilizing geometric and implant manipulations.
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