Method of manufacturing split-gate memory

摘要

A method of manufacturing split-gate memory provides a control gate insulating film and the tunneling insulating film in a cell region, a high voltage gate insulating film in a high voltage region, and a low voltage gate insulating film in a low voltage region, all having different thickness. Additionally, a pre-cleaning process removes an outer sidewall portion of a spacer to form a tip portion of a floating gate that overlaps a control gate line formed proximate the floating gate.