SEMICONDUCTOR DEVICE WITH A GATE CONTACT POSITIONED ABOVE THE ACTIVE REGION

摘要

One illustrative device disclosed herein includes a stepped conductive source/drain structure with a cavity defined therein, the cavity being located vertically above an active region, a non-conductive structure positioned in the cavity, a layer of insulating material positioned above the gate structure, the stepped conductive source/drain structure and the non-conductive structure, a gate contact opening defined in the layer of insulating material and a conductive gate contact positioned in the gate contact opening that is conductively coupled to the gate structure, wherein at least a portion of the conductive gate contact is positioned vertically above the non-conductive structure.

主权项

1. A transistor device, comprising:
a gate structure; an active region of a semiconducting substrate surrounded by an isolation region; a source/drain region; a stepped conductive source/drain contact structure formed above and contacting said source/drain region and having a first upper surface with a first height and a second upper surface with a second height greater than said first height; a non-conductive structure positioned above said first upper surface and having a third upper surface coplanar with said second upper surface; a layer of insulating material positioned above said gate structure, said stepped conductive source/drain contact structure and said non-conductive structure; a conductive gate contact disposed in said layer of insulating material and being conductively coupled to said gate structure, wherein, in a plan view of said transistor device, said non-conductive structure is disposed on left and right sides of said conductive gate contact; and a source/drain contact disposed in said layer of insulating material and contacting said second upper surface of said source/drain contact structure.