Seed Layer for Multilayer Magnetic Materials

摘要

A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof is inserted between the seed layer and magnetic layer. In some embodiments, a first composite seed layer/NiCr stack is formed below the reference layer, and a second composite seed layer/NiCr stack is formed between the free layer and a dipole layer. The magnetic element has thermal stability to at least 400° C.

主权项

1. A magnetic element, comprising:
(a) an underlayer comprising at least one seed layer that includes an element or alloy selected from a first group of materials that is Ta, Zr, Nb, TaN, ZrN, NbN, and Ru, and an element or alloy selected from a second group of materials that is Mg, Sr, Ti, Al, V, Hf, B, Si, MgZr, and MgNb; (b) a growth promoting layer made of NiCr or an alloy thereof that contacts a top surface of the underlayer, and forms an interface with an overlying laminated layer with intrinsic perpendicular magnetic anisotropy (PMA); (c) the laminated layer having intrinsic PMA; and (d) a tunnel barrier layer formed on the laminated layer with intrinsic PMA.