主权项 |
1. A symmetrically-bidirectional power bipolar transistor device, comprising:
a semiconductor die having, on both surfaces thereof, a first-conductivity-type emitter/collector region which is completely laterally surrounded by a first insulating trench, and which overlies a second-conductivity-type semiconductor mass; two current-carrying metallizations, on the two surfaces of the die, which separately connect the two emitter/collector regions to respective external current-carrying terminals, but not to each other; one or more second-conductivity-type base contact regions, including heavily-doped second-conductivity-type contact areas, which border and completely surround the first insulating trench; two additional metallizations, on the two surfaces of the die, which separately connect the two base contact regions to respective additional external terminals, but not to each other; one or more second insulating trenches, which, singly or in combination, completely surround the second-conductivity-type base contact regions; an innermost first-conductivity-type field-limiting ring, which completely surrounds the second insulating trenches; and additional first-conductivity-type field-limiting rings, which surround the innermost field-limiting ring. |