Nanowire electric field effect sensor having three-dimensional stacking structure nanowire and manufacturing method therefor

摘要

The present invention provides a nanowire sensor comprising nanowires, in which the nanowires are stacked to form a three-dimensional structure so that they have a large exposed surface area compared to that of a conventional straight nanowire sensor in the same limited area, thereby increasing the probability of attachment of a target material to the nanowires to thereby increase the measurement sensitivity of the sensor. Thus, a change in the electrical conductivity (conductance or resistance) of the nanowires can be sensed with higher sensitivity, suggesting that the sensor has increased sensitivity.

主权项

1. A nanowire field effect sensor comprising nanowires having a three-dimensional stacked structure, the nanowire field effect sensor comprising:
a substrate for forming the nanowire field effect sensor; a source electrode formed by alternately stacking one or more semiconductor channel layers and sacrificial layers on one side of the substrate in a direction perpendicular to the substrate; a drain electrode formed by alternately stacking one or more semiconductor channel layers and sacrificial layers on another side of the substrate in a direction perpendicular to the substrate; one or more nanowires connected between the semiconductor channel layers of the source electrode and the semiconductor channel layers of the drain electrode and stacked in a direction perpendicular to the substrate; a channel made of a separate material through which a solution can flow and formed between a rate insulating layer of an outer surface of the nanowires and a submerged gate electrode formed on the substrate; and a detector material which is fixed to a side of the nanowires and reacts selectively with a target material introduced from an outside source.