| 摘要 |
<p>PURPOSE:To provide a device in which deterioration due to oxidation is minimized, by using quartz as the material of the part of the container which comes in contact with melted semiconductor liquid in a device to grow compound semiconductor in liquid phase, and using sapphire as the material for base supporting members. CONSTITUTION:Melted liquid tank 5, made of quartz, is placed on base-plate housing part 1, made of carbon, whose inner surface is protected by quartz. Sliding plate 9 is provided between the bottom part of melted liquid tank 5 and base-plate housing part 1 so as to maintain airlightness. At the time of starting liquid-phase growing, by moving sliding plate 9, hole 7 and hole 10 are fitted together, and, melted semiconductor liquid which is contained in melted liquid tank 5 is drawn into base-plate housing part 1. Oxidation-resisting and heat-conducting material, such as sapphire, is used as the material for base-plate supporting member 3 inside base-plate housing part 1. Since no carbon is used for the part which comes in contact with melted liquid, the apparatus can be used for many hours, and it is possible to obtain a liquid-phase grown layer of uniform quality.</p> |
