| 摘要 |
PURPOSE:To enable a thick film layer of a high-melting metal or an oxide semiconductor to be formed on a substrate, by a method wherein a high-molecular molded article substrate previously converted into an electret is moved along a metal surface, and a film layer is vacuum-deposited on the opposite surface to the metal surface. CONSTITUTION:For example, within a vacuum tank 3 kept under vacuum by means of an exhaust system 10, a material 4' (e.g. Ti) to be evaporated (which is charged in a water-cooled copper hearth 7) is heated and evaporated by an electron beam source 8. The evaporated material 4' is deposited on the surface of a high-molecular molded article substrate 2 (e.g. a polycarbonate film) which is supplied from an unwinding shaft 5 and reaches a metal rotating drum 1. If necessary, the non-metallized surface of the substrate is exposed to glow discharge generated by applying AC voltage to a flat electrode 14 in the presence of Ar gas. Then the metallized substrate is wound up around a winding shaft 11. EFFECT:An NiCr layer of 0.6mu in thickness can be deposited on the surface of a polycarbonate film of 2-3mu in thickness. |
