发明名称 HIGH THROUGHPUT CHEMICAL VAPOR DEPOSITION ELECTRODE
摘要 Processes and systems to fabricate high throughput, low cost tubular polysilicon feed rods, which can be used as direct feedstock to grow a crystalline silicon material, are disclosed. In an example, a chemical vapor deposition (CVD) process includes depositing polysilicon on a tubular electrode to form a tubular polysilicon feed rod. The tubular polysilicon feed rod may be melted in a float zone process to grow the single-crystalline silicon material.
申请公布号 WO2016182824(A1) 申请公布日期 2016.11.17
申请号 WO2016US30856 申请日期 2016.05.04
申请人 SUNPOWER CORPORATION 发明人 CHUN, Moon
分类号 H01L31/0392;C23C16/24;C23C16/44;H01L31/0368 主分类号 H01L31/0392
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