发明名称 |
THE FABRICATION OF GROOVED SEMICONDUCTOR DEVICES |
摘要 |
V-grooves are etched in Group III-V compound semiconductors using a composite mask comprising a thin native oxide layer on the semiconductor and a dielectric etch mask on the native oxide. Described in detail is the application of this technique to etching V-grooves in InP for the fabrication of CSBH InP/InGaAsP lasers. |
申请公布号 |
WO8601367(A3) |
申请公布日期 |
1986.07.17 |
申请号 |
WO1985US00918 |
申请日期 |
1985.05.16 |
申请人 |
AMERICAN TELEPHONE & TELEGRAPH COMPANY |
发明人 |
DAUTREMONT-SMITH, WILLIAM, CROSSLEY;WILT, DANIEL, PAUL |
分类号 |
H01L21/306;H01L21/308;H01L21/316;H01S5/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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