| 摘要 |
A lower gate type semiconductor device, in which, for increasing an on-current of a lower gate type thin film transistor and restricting an off-current, there is provided a gate-controlled offset region different from a channel region in one or both conductivity types. This region increases the on-current of the transistor, provides a reduction of a leakage current, and restriction of a subthreshold coefficient. A two-dimensional size can also be reduced by altering the gate height. The on-current is increased, and the leakage current is reduced in the device. The offset region is composed of a semiconductor material and is formed at the end of a drain region of the device.
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