发明名称 Memory having bit line load with automatic bit line precharge and equalization
摘要 A bit line load (380) is coupled to a bit line pair and includes bipolar pull up transistors (389, 403), P-channel load transistors (390, 404), a NAND logic gate (395), and a P-channel equalization transistor. The NAND logic gate (395) senses a differential voltage on the bit line pair, and provides an equalization signal. When a write control signal indicates the end of a write cycle, the equalization signal initiates precharge and equalization of the bit line pair.
申请公布号 US5416744(A) 申请公布日期 1995.05.16
申请号 US19940207515 申请日期 1994.03.08
申请人 MOTOROLA INC. 发明人 FLANNAGAN, STEPHEN T.;CHILDS, LAWRENCE F.
分类号 G11C11/41;G11C7/12;(IPC1-7):G11C7/00 主分类号 G11C11/41
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