Modulationsdotierter Feldeffekttrasistor mit kompositionsmodulierter Barrierenstruktur

摘要

The invention concerns a modulation-doped field-effect transistor comprising a channel layer (3) to which is applied a barrier layer (4) adapted as concerns the lattice to the channel layer crystal structure. The barrier layer is composed of a mixed crystal structure and doping. In particular, the buffer layer (2) consists of GaAs, the channel layer (3) of GaInAs and the barrier layer (4) of GaxIn1-xP. The invention is characterized in that the ratio between the elements of the mixed crystal composition is site-dependent such that the ratio at at least one point within the barrier layer (4) has an extreme value. In particular, the Ga content x of the mixed crystal within the barrier layer (4) is site-dependent and comprises at least one region in which x has a maximum value.