发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To enable a function determining circuit in an LSI of bonding option to be lessened in current consumption and area occupied by it on a chip. SOLUTION: A DC voltage VREF generated in an LSI and smaller than a power supply voltage VDD but larger than a ground potential is applied to a gate electrode of a PMOS transistor QP1 which forms a function determining circuit. As the gate voltage of the transistor QP1 is set lower than usual, a current flowing through the transistor QP1 is lessened. Therefore, the gate of the transistor QP1 can be lessened in length. When a second PMOS transistor is connected to the transistor QP1 in parallel and made to have a function to feed electrical charge to a node A, the transistor QP1 can be much lessened in area. When a DC voltage such as a reduced voltage generated in an LSI for a certain purpose other than a function determining circuit is used, an area required for providing a dedicated voltage generating circuit is not required, so that the function determining circuit is restrained from increasing in area.
申请公布号 JPH0955468(A) 申请公布日期 1997.02.25
申请号 JP19950208884 申请日期 1995.08.16
申请人 NEC CORP 发明人 NAGANAMI TORU
分类号 H01L27/04;H01L21/822;H01L23/50;H03K5/08;H03K5/153;(IPC1-7):H01L27/04 主分类号 H01L27/04
代理机构 代理人
主权项
地址