| 摘要 |
PROBLEM TO BE SOLVED: To eliminate need of forming a multi-layer film between a metal substrate and a superconductive film, and enable manufacture without using hydrogen. SOLUTION: An intermediate insertion layer is manufactured by vaporizing rare earth metal of which oxide has a type-C rare earth structure to react with oxygen to be biaxially oriented, and depositing it on a biaxially oriented metal substrate. Deposition of the rare earth metal is performed by vaporizing the rare earth metal by an electron beam, for example, and this vaporization is performed at surface temperature of the metal substrate of 450 deg.C or more and within the temperature range under the lower one of melting temperature of rare earth metal oxide and melting temperature of the metal substrate, with total atmospheric pressure within a range of over 1×10<-6> Torr and 1×10<-3> Torr or under, and within a temperature and oxygen partial pressure range where the rare earth metal is oxidized, but not the metal substrate.
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