SEMICONDUCTOR DEVICE SEPARATING FILM MANUFACTURING METHOD USING TRENCH

摘要

PURPOSE: A semiconductor device separating film manufacturing method is provided to repress the leakage current caused by the concentration of an electric field by making round the corner of a trench. CONSTITUTION: The semiconductor device separating film manufacturing method comprises the steps of: forming an oxidizing film(24) and a nitride film(23) in order on a semiconductor substrate; forming a nitride film(23) and an oxidizing film(24) patterns through a mask defining the field and eliminating a side of the oxidizing film(24); and decreasing the grade of the etching corner of the semiconductor substrate by etching a certain depth of the exposed semiconductor substrate with the aromatic etching solution.