发明名称 Photoconductor, and image forming method and image forming apparatus using the same
摘要 A photoconductor, including an electroconductive substrate; an intermediate layer overlying the electroconductive substrate; and a photosensitive layer overlying the intermediate layer. The intermediate layer includes a metal oxide and a binder resin, and has a WRa (LLH) less than 0.12 μm and WRa (LHH) of from 0.03 to 0.2 μm in a curve.
申请公布号 US9523930(B2) 申请公布日期 2016.12.20
申请号 US201514612637 申请日期 2015.02.03
申请人 Ricoh Company, Ltd. 发明人 Kami Hidetoshi;Eguchi Nobutaka;Sugino Akihiro;Shimoyama Keisuke;Egawa Kazuhiro
分类号 G03G5/06;G03G5/14;G03G5/047 主分类号 G03G5/06
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A photoconductor, comprising: an electroconductive substrate; an intermediate layer; and a photosensitive layer, wherein the intermediate layer is formed by spray coating and comprises a metal oxide and a binder resin, and has a WRa (LLH) less than 0.12 μm and WRa (LHH) of from 0.03 to 0.2 μm in a curve obtained by: (I) forming one-dimensional data array by measuring a concave-convex form of the surface of the intermediate layer by a surface roughness and profile measurer; (II) subjecting the one-dimensional data array to wavelet transformation by a multi-resolution analysis (MRA-1) to separate the data array into six frequency components through the highest frequency component HHH, the second frequency component HHL, the third frequency component HMH, the fourth frequency component HML the fifth frequency component HLH to the lowest frequency component HLL; (III) thinning the one-dimensional data array of the lowest frequency component HLL so that a number of data array is reduced to 1/10 to 1/100 to prepare a thinned one-dimensional data array; (IV) subjecting the thinned one-dimensional data array to wavelet transformation by a multi-resolution analysis (MRA-2) to separate the data array into six frequency components through the highest frequency component LHH, the second frequency component LHL, the third frequency component LMH, the fourth frequency component LML, the fifth frequency component LLH to the lowest frequency component LLL; and (V) linking logarithms of eleven arithmetic mean roughnesses of from WRa (LLL) to WRa (HHH) excluding WRa (HLL) of the frequency components obtained in (II) and (IV), wherein the arithmetic mean roughnesses (Ra) of the frequency components are defined in JIS-B0601:2001 as follows: WRa (HHH): Ra in a bandwidth having a cycle length of convexoconcave of from 0 to 3 μm,WRa (HHL): Ra a bandwidth having a cycle length of convexoconcave of from 1 to 6 μm,WRa (HMH): Ra a bandwidth having a cycle length of convexoconcave of from 2 to 13 μm,WRa (HML): Ra a bandwidth having a cycle length of convexoconcave of from 4 to 25 μm,WRa (HLH):Ra in a bandwidth having a cycle length of convexoconcave of from 10 to 50 μm, WRa (HLL): Ra in a bandwidth having a cycle length of convexoconcave of from 24 μm to 99 μm, WRa (LHH): Ra in a bandwidth having a cycle length of convexoconcave of from 26 to 106 μm,WRa (LHL): Ra in a bandwidth having a cycle length of convexoconcave of from 53 to 183 μm,WRa (LMH): Ra in a bandwidth having a cycle length of convexoconcave of from 106 to 318 μm,WRa (LML): Ra in a bandwidth having a cycle length of convexoconcave of from 214 to 551 μm,WRa (LLH): Ra in a bandwidth having a cycle length of convexoconcave of from 431 to 954 μm, andWRa (LLL): Ra in a bandwidth having a cycle length of convexoconcave of from 867 to 1,654 μm, wherein the metal oxide is a titanium oxide, wherein the metal oxide is a mixture comprising two metal oxides T1 and T2 each having an average primary particle diameter different from each other, and wherein one of the metal oxides T2 has an average primary particle diameter (D2) larger than 0.05 μm and smaller than 0.10 μm, wherein the titanium oxide comprises a rutile titanium oxide and an anatase titanium oxide, and wherein the photosensitive layer includes a metal-free phthalocyanine and an azo pigment as a charge generation material.
地址 Tokyo JP