发明名称 METHOD FOR MANUFACTURING MULTI-LEVEL RETICLE USING BI-LEVEL PHOTORESIST INCLUDING PHASE-SHIFTED MULTI-LEVEL RETICLE
摘要 PURPOSE: A fabrication method of multi-level reticle is provided to simplify manufacturing processes of a dual-damascene structure on a wafer and to decrease the number of processes by using bi-level photoresist. CONSTITUTION: A reticle is formed by the following steps. A reticle blank(50) is formed, wherein the reticle blank(50) includes a quartz layer(52), an APS(Attenuation Phase Shift) layer(54) and a metal film(56). Then, a resist layer is coated on the reticle blank(50). Then, the resist layer is patterned into a plurality of levels so as to form a multi-level resist pattern(58). The reticle blank(50) is etched in accordance with the multi-level resist pattern(58).
申请公布号 KR20020022043(A) 申请公布日期 2002.03.23
申请号 KR20010057701 申请日期 2001.09.18
申请人 SHARP CORPORATION 发明人 MALISZEWSKI GERALD WILLIAM;ULRICH BRUCE DALE
分类号 G03F1/00;G03F1/28;G03F1/32;H01L21/027 主分类号 G03F1/00
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