发明名称 |
Semiconductor device and method of manufacturing same |
摘要 |
A semiconductor device which achieves reductions in malfunctions and operating characteristic variations by reducing the gain of a parasitic bipolar transistor, and a method of manufacturing the same are provided. A silicon oxide film (6) is formed partially on the upper surface of a silicon layer (3). A gate electrode (7) of polysilicon is formed partially on the silicon oxide film (6). A portion of the silicon oxide film (6) underlying the gate electrode (7) functions as a gate insulation film. A silicon nitride film (9) is formed on each side surface of the gate electrode (7), with a silicon oxide film (8) therebetween. The silicon oxide film (8) and the silicon nitride film (9) are formed on the silicon oxide film (6). The width (W1) of the silicon oxide film (8) in a direction of the gate length is greater than the thickness (T1) of the silicon oxide film (6).
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申请公布号 |
US2003025135(A1) |
申请公布日期 |
2003.02.06 |
申请号 |
US20020192657 |
申请日期 |
2002.07.11 |
申请人 |
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发明人 |
MATSUMOTO TAKUJI;SAYAMA HIROKAZU;MAEDA SHIGENOBU;IWAMATSU TOSHIAKI;OTA KAZUNOBU |
分类号 |
H01L21/822;H01L21/336;H01L21/762;H01L21/8234;H01L21/8238;H01L21/84;H01L27/04;H01L27/08;H01L27/088;H01L27/092;H01L27/12;H01L29/78;H01L29/786;H04L1/16;H04L29/08;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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